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Low-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions

DC FieldValueLanguage
dc.contributor.author김주연( Jooyeon Kim )-
dc.contributor.other안호명( Ho Myoung An )-
dc.date.accessioned2016-01-15T04:00:16Z-
dc.date.available2016-01-15T04:00:16Z-
dc.date.issued2015-
dc.identifier.issn1229-7607-
dc.identifier.otherOAK-2015-0005-
dc.identifier.urihttp://kiss.kstudy.com/search/detail_page.asp?key=3348633ko_KR
dc.identifier.urihttp://repository.uc.ac.kr/handle/2014.oak/2129-
dc.description.statementofresponsibilityopen-
dc.format.extent187 ~ 189-
dc.publisher한국전기전자재료학회-
dc.relation.ispartofTrans. Electr. Electron. Mater. (TEEM)-
dc.relation.ispartofseries16-
dc.subjectLow-temperature polycrystalline silicon-
dc.subjectTFT-
dc.subjectNi-silicide-
dc.subjectSB junction-
dc.subjectSchottky barrier-
dc.subjectThin film transistor-
dc.subjectLTPS-
dc.subjectCTF-
dc.subjectCharge-trap flash-
dc.titleLow-Temperature Poly-Si TFT Charge Trap Flash Memory with Sputtered ONO and Schottky Junctions-
dc.type연구논문-
dc.contributor.college전기전자공학부-
dc.relation.issubpartofseries4-

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