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Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors

Title 
Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors
Authors 
Do Young Kim
Authors 
Kyung Soo Jang; Raja J.; Youn-Jung Lee
Keywords 
Thin Film Transistors, Tin, Iron, Chemicals, Next Generation Networking, Indium, Thin-Film Transistor (Tft), Carrier Concentration, Crystallinity, In Content, Indium-Tin-Zinc-Oxide (Itzo), Next-Generation Displays
Issue Date 
2013
Publisher 
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Journal 
IEEE ELECTRON DEVICE LETTERS
Vol. 
34
Issue 
9
Pages 
1151-1153
URI 
http://dx.doi.org/10.1109/LED.2013.2272084
http://repository.uc.ac.kr/handle/2014.oak/489
ISSN 
0741-3106
Appears in Collections
15. 전기전자공학부 > 연구논문

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