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Design of Novel 1 Transistor Phase Change Memory

Title 
Design of Novel 1 Transistor Phase Change Memory
Authors 
Kim, Jooyeon
Authors 
Kim, Byungcheul
Keywords 
Memory, Phase change memory, PCM, Nonvolatile, GST
Issue Date 
2014
Publisher 
The Korean Institute of Electrical and Electronic Material Engineers
Journal 
Transactions on electrical and electronic materials
Vol. 
15
Issue 
1
Pages 
37-40
URI 
http://koreascience.or.kr/article/ArticleFullRecord.jsp?cn=E1TEAO_2014_v15n1_37
http://repository.uc.ac.kr/handle/2014.oak/557
ISSN 
1225-7607
Appears in Collections
15. 전기전자공학부 > 연구논문

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