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좁은 Channel형 Permalloy 磁性薄膜의 熱活性化된 磁機的 Creep

Title 
좁은 Channel형 Permalloy 磁性薄膜의 熱活性化된 磁機的 Creep
Other Titles 
Studies on Thermally Activated Magnetic Creep in Narrow Channel of Permalloy Thin Films
Authors 
李英善
Authors 
秦慶市
Issue Date 
1980
Journal 
연구논문집
Vol. 
Vol.5
Issue 
No. 1
Pages 
119-123
Abstract 
좁은 channel형 Permalloy(80% Ni-20% Fe) 자성박막 기억소자에 대한 magnetic creep현상과 열활성화된 자벽운동 사이의 관계를 고찰 하였다. 상온(0℃∼60℃) 범위에서 온도변화에 대한 magnetic creep속도를 측정하여 열활성화된 자벽운동의 magnetic creep현상을 표현할 수 있는 실험식V=V_0 exp (A(1-γH_t)/kT)(H-H_0)를 도출하였다.
The relation between magnetic creep phenomenon and thermally activated magnetic domain wall motion in narrow channel of Permalloy (80% Ni-20% Fe) thin films for memory elements was studied. From the measurement of magnetic creep velocity at vrious temperature (0-60℃), it is found that magnetic domain wall motion could be expressed in the following unified empirical formula form V=V_0 exp (A(1-γH_t)/kT)(H-H_0).
URI 
http://repository.uc.ac.kr/handle/2014.oak/714
ISSN 
1598-3390
Appears in Collections
15. 전기전자공학부 > 연구논문

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